All MOSFET. AP5N50BD Datasheet

 

AP5N50BD Datasheet and Replacement


   Type Designator: AP5N50BD
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 32.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 33 nS
   Cossⓘ - Output Capacitance: 39 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO252
 

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AP5N50BD Datasheet (PDF)

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AP5N50BD

AP5N50BD 500V N-Channel Enhancement Mode MOSFET Description The AP5N50BD is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gene

 8.1. Size:1600K  cn apm
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AP5N50BD

AP5N50D 500V N-Channel Enhancement Mode MOSFE Description The AP5N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General

 8.2. Size:1440K  cn apm
 ap5n50f ap5n50p ap5n50t.pdf pdf_icon

AP5N50BD

AP5N50FIPIT 500V N-Channel Enhancement Mode MOSFET Description The AP5N50D is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Ge

Datasheet: AP4435A , AP4435B , AP45P06D , AP45P06NF , AP4606C , AP4953A , AP4953B , AP5N40D , 2SK3878 , AP5N50D , , , , , , , .

History: AP4953A

Keywords - AP5N50BD MOSFET datasheet

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