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AP260N12TLG1 Spec and Replacement


   Type Designator: AP260N12TLG1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 240 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 240 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 41 nS
   Cossⓘ - Output Capacitance: 739 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0042 Ohm
   Package: TOLLA-8L

 AP260N12TLG1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP260N12TLG1 Specs

 ..1. Size:1368K  cn apm
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AP260N12TLG1

AP260N12TLG1 120V N-Channel Enhancement Mode MOSFET Description The AP260N12TLG1 uses advanced APM-SGT technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 120V Type 135V I =260A DS D R ... See More ⇒

 9.1. Size:95K  ape
ap2607agy-hf.pdf pdf_icon

AP260N12TLG1

AP2607AGY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS -20V Small Package Outline RDS(ON) 52m Surface Mount Device ID -5A G Halogen Free & RoHS Compliant Product S S D Description D Advanced Power MOSFETs utilized advanced processing techniques G to achieve the lowest possible ... See More ⇒

 9.2. Size:130K  ape
ap2605gy-hf.pdf pdf_icon

AP260N12TLG1

AP2605GY-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Fast Switching Characteristic BVDSS -30V S Lower Gate Charge RDS(ON) 80m D D Small Footprint & Low Profile Package ID - 4A G RoHS Compliant D SOT-26 D Description D Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possi... See More ⇒

 9.3. Size:115K  ape
ap2609gyt.pdf pdf_icon

AP260N12TLG1

AP2609GYT-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V D Small Size & Lower Profile RDS(ON) 18m RoHS Compliant & Halogen-Free ID -11.3A G S D D Description D Advanced Power MOSFETs from APEC provide the designer with D the best combination of fast switching, ruggedized device de... See More ⇒

Detailed specifications: AP60P03D , AP65N03DF , AP65N04DF , AP65N06NF , AP68N04DF , AP68N04NF , AP6946A , AP6G03LI , SKD502T , AP30N10Y , AP30N15D , AP30N20P , AP30P01DF , AP30P02DF , AP30P03D , AP40N02D , AP40N03S .

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