AP30N20P Spec and Replacement
Type Designator: AP30N20P
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pd ⓘ
- Maximum Power Dissipation: 104
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 30
A
Tj ⓘ - Maximum Junction Temperature: 150
°C
tr ⓘ - Rise Time: 45
nS
Cossⓘ -
Output Capacitance: 180
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13
Ohm
Package:
TO220
AP30N20P Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP30N20P Specs
..1. Size:1255K cn apm
ap30n20p.pdf 
AP30N20P 200V N-Channel Enhancement Mode MOSFET Description The AP30N20P is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. Gener... See More ⇒
9.1. Size:110K ape
ap30n30w.pdf
AP30N30W Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Avalanche Test BVDSS 250V Simple Drive Requirement RDS(ON) 68m Lower On-resistance ID 36A G RoHS Compliant S Description AP30N30 from APEC provide the designer with the best combination of fas... See More ⇒
9.2. Size:111K ape
ap30n30wi.pdf
AP30N30WI Pb Free Plating Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D 100% Avalanche Test BVDSS 250V Simple Drive Requirement RDS(ON) 68m Lower On-resistance ID 30A G RoHS Compliant S Description AP30N30 from APEC provide the designer with the best combination of f... See More ⇒
9.5. Size:1427K cn apm
ap30n06df.pdf
AP30N06DF 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R ... See More ⇒
9.6. Size:1476K cn apm
ap30n06y.pdf
AP30N06Y 60V N-Channel Enhancement Mode MOSFET Description The AP30N06Y uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R ... See More ⇒
9.7. Size:1645K cn apm
ap30n06p ap30n06t.pdf
AP30N06PIT 60V N-Channel Enhancement Mode MOSFET Description The AP30N06DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30A DS D R ... See More ⇒
9.8. Size:1317K cn apm
ap30n10y.pdf
AP30N10Y 100V N-Channel Enhancement Mode MOSFET Description The AP30N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =30A DS D R ... See More ⇒
9.9. Size:1455K cn apm
ap30n10d.pdf
AP30N10D 100V N-Channel Enhancement Mode MOSFET Description The AP30N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I = 30A DS D R ... See More ⇒
9.10. Size:1290K cn apm
ap30n03df.pdf
AP30N03DF 30V N-Channel Enhancement Mode MOSFET Description The AP30N03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =30 A DS D R ... See More ⇒
9.11. Size:1207K cn apm
ap30n06d.pdf
AP30N06D 60V N-Channel Enhancement Mode MOSFET Description The AP30N06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 60V I =30 A DS D R ... See More ⇒
9.12. Size:1316K cn apm
ap30n02d.pdf
AP30N02D 20V N-Channel Enhancement Mode MOSFET Description The AP30N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 20V I =30A DS D R = 11m @ V =4.5V DS(ON) GS Application ... See More ⇒
9.13. Size:1556K cn apm
ap30n15d.pdf
AP30N15D 150V N-Channel Enhancement Mode MOSFET Description The AP30N15D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 150V I =30 A DS D R ... See More ⇒
Detailed specifications: AP65N06NF
, AP68N04DF
, AP68N04NF
, AP6946A
, AP6G03LI
, AP260N12TLG1
, AP30N10Y
, AP30N15D
, AON7410
, AP30P01DF
, AP30P02DF
, AP30P03D
, AP40N02D
, AP40N03S
, AP40N10P
, AP40N20MP
, AP40P02D
.
Keywords - AP30N20P MOSFET specs
AP30N20P cross reference
AP30N20P equivalent finder
AP30N20P lookup
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AP30N20P replacement
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