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AP60N02DF Spec and Replacement


   Type Designator: AP60N02DF
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 60 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 37 nS
   Cossⓘ - Output Capacitance: 289 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.01 Ohm
   Package: PDFN3X3-8L

 AP60N02DF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP60N02DF Specs

 ..1. Size:1352K  cn apm
 ap60n02df.pdf pdf_icon

AP60N02DF

AP60N02DF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R ... See More ⇒

 6.1. Size:1158K  cn apm
 ap60n02d.pdf pdf_icon

AP60N02DF

AP60N02D 20V N-Channel Enhancement Mode MOSFET Description The AP60N02D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R ... See More ⇒

 7.1. Size:1354K  cn apm
 ap60n02nf.pdf pdf_icon

AP60N02DF

AP60N02NF 20V N-Channel Enhancement Mode MOSFET Description The AP60N02NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R ... See More ⇒

 7.2. Size:1402K  cn apm
 ap60n02bd.pdf pdf_icon

AP60N02DF

AP60N02BD 20V N-Channel Enhancement Mode MOSFET Description The AP60N02BD uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =20V I =60A DS D R ... See More ⇒

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Detailed specifications: AP40P02D , AP40P03DF , AP40P04D , AP40P04DF , AP40P04NF , AP5P04MI , AP5P06MSI , AP60N02D , IRFP250 , AP60N02NF , AP60N03D , AP60N03DF , AP60N03NF , AP60N03Y , AP60N04D , AP60N04DF , AP60N04NF .

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