AP60N04DF Datasheet. Specs and Replacement

Type Designator: AP60N04DF  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 34.7 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.4 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: PDFN3X3-8L

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AP60N04DF datasheet

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AP60N04DF

AP60N04DF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R ... See More ⇒

 6.1. Size:897K  cn apm
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AP60N04DF

AP60N04D 40V N-Channel Enhancement Mode MOSFET Description The AP60N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R ... See More ⇒

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 ap60n04q.pdf pdf_icon

AP60N04DF

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AP60N04DF

AP60N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP60N04NF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =60 A DS D R ... See More ⇒

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Detailed specifications: AP60N02D, AP60N02DF, AP60N02NF, AP60N03D, AP60N03DF, AP60N03NF, AP60N03Y, AP60N04D, AO3407, AP60N04NF, AP60N06F, AP60P02D, AGMH10P15C, AGMH10P15D, AGMH12H05H, AGMH12N10C, AGMH6018C

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