AGM318MN Datasheet and Replacement

AGM318MN General DescriptionProduct SummaryThe AGM318MN combines advancedtrenchMOSFET technology with a low resistanceto provide extremely low R .package DS(ON)BVDSS RDSON IDThis device isideal for load switch and battery30V 16m 8Aprotection applications. Features SOP8 Pin Configuration Advance high cell density Trench technologyR to minimize conductive lo

AGM318MAPTable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold V

AGM318MBP General DescriptionThe AGM318MBP combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.30V 16m 8A FeaturesAdvance high cell density Trench technologyPDFN3.3*3.3 Pin Configuration Low R to mi

AGM318D25 20 VGS= 5 ~10V 20 16 VGS 4V 15 12 10 8 5 4VGS 3V 0 00 1 2 3 4 5 6 0 1 2 3 4 5 6VDS , Drain-to-Source Voltage (V) VGS , Gate-to-Source Voltage (V) Figure 1. Output Characteristics Figure 2. Transfer Characteristics 1.1 2 VG = 10V ID= 250uA 1.075 1.75 ID= 6.9A 1.05 1.5 1.025 1.25 1 1 0.975 0.75 0.95 0.50.925 0.25-50 -25 0 25 50 75 100 12