AGM301C1 Datasheet and Replacement

AGM301C1 General DescriptionThe AGM301C1 combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications. Features 30V 1.5m 170AAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to minim

AGM3015H General DescriptionThe AGM3015H combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is idealfor load switch and batteryBVDSS RDSON IDprotection applications.30V 1.5m 138A FeaturesAdvance high cell density Trench technologyTO-263 Pin ConfigurationLow R to mini

AGM3015DTypical Electrical and Thermal Characteristics (Curves)Vds Drain-Source Voltage (V) TJ-Junction Temperature() Figure 1 Output Characteristics Figure 4 Rdson-JunctionTemperature Vgs Gate-Source Voltage (V) Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figure 6

AGM3015ATypical Electrical & Thermal Characteristics150 30VGS = 10VVGS = 3.5VVDS = 5.0VVGS = 5.0VVGS = 4.5V120 24VGS = 4.0VTJ = 125C90 1860 12VGS = 3.0VTJ = 25C30 6VGS = 2.7VVGS = 2.5V0 00 0.6 1.2 1.8 2.4 3 1 1.5 2 2.5 3 3.5VDS (V) VGS (V)Figure 1: Saturation Characteristics Figure 2: Transfer Characteristics4 2.53.2 2VGS = 10VID = 20AVG

AGM3012AP-CPTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 35 -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltag

AGM301A1Table 3. Electrical Characteristics (T =25 unless otherwise noted)J Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Voltage