AGM308AP Datasheet and Replacement

AGM308AP General DescriptionProduct SummaryThe AGM308AP combines advancedtrenchMOSFET technology with a low resistanceto providepackage extremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and battery30V 6.2m 40Aprotection applications. FeaturesPDFN3.3*3.3 Pin ConfigurationAdvance high cell density Trench technology Low R to mi

AGM308ATypical Performance Characteristics Figure 2: Typical Transfer CharacteristicsFigure1: Output CharacteristicsID (A)ID (A)10010010V8V80803.5V5V606040 403V1252520 20VGS=2.5VVGS(V)VDS(V)0 00 2.0 4.0 6.0 8.0 10.00 1 2 3 4 5 6Figure 3:On-resistance vs. Drain Current Figure 4: Body Diode CharacteristicsIS(A)RDS(ON) (m)1410

AGM308MATable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold Vo

AGM308MN General DescriptionThe AGM308MN combines advanced trenchProduct SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)This device is idealfor load switch and batteryprotection applications.BVDSS RDSON ID Features30V 8.8m 15AAdvance high cell density Trench technology Low R to minimize conductive lossDS(ON)

AGM308SFig.1 Power Dissipation Fig.2 Typical output CharacteristicsV =10VGSV =4.5VGSFig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain CurrentFig.5 On-Resistance VS Gate Source Voltage Fig.6 On-Resistance V.S Junction Temperaturewww.agm-mos.com 3 VER2.71AGM308SFig.7 Switching Time Measurement Circuit Fig.8 Gate Charge WaveformFig.9 Switching Tim

AGM308MARTable 3. N- Channel Electrical Characteristics (TJ=25unless otherwisenoted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DDSSZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DS100IGSSVGS(th) Gate Threshold V

AGM308MBPTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 30 -- -- VGS DZero Gate Voltage Drain Current V =30V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current 100VGS(th) Gate Threshold Voltage V =V

AGM308SRFig.1 Power Dissipation Fig.2 Typical output Characteristics 1.2 20011500.8V =10V GS1000.6V =4.5V GS0.4500.200 0.5 1 1.5 20Drain-Source voltage (V)0 50 100 150 200Temperature (C)Fig.3 Threshold Voltage V.S Junction Temperature Fig.4 Resistance V.S Drain Current 2.5 65241.53120.51000 50 100-50 50 150Drain Curren