AGM308MA MOSFET Datasheet: NP-Ch, 30V, 30A. Full specification with pinout and replacement list

AGM308MA Specs and Replacement

Type Designator: AGM308MA

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 37 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 130 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: PDFN5X6

AGM308MA substitution

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AGM308MA datasheet

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AGM308MA Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold Vo... See More ⇒

0.1. Size:1485K cn agmsemi
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AGM308MAR Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V... See More ⇒

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AGM308MN General Description The AGM308MN combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery protection applications. BVDSS RDSON ID Features 30V 8.8m 15A Advance high cell density Trench technology Low R to minimize conductive loss DS(ON) ... See More ⇒

7.2. Size:1332K cn agmsemi
agm308mbp.pdf pdf_icon

AGM308MBP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =V... See More ⇒

Detailed specifications: AGM3015A, AGM3015D, AGM3015H, AGM301A1, AGM301C1, AGM302A1, AGM308A, AGM308AP, 2N7000, AGM308MAR, AGM308MBP, AGMH403A1, AGMH605C, AGMH606C, AGMH606H, AGMH6080H, AGMH612D