AGMH614C Specs and Replacement
Type Designator: AGMH614C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 119 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO220
AGMH614C substitution
- MOSFET ⓘ Cross-Reference Search
AGMH614C datasheet
agmh614c.pdf
AGMH614C Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,... See More ⇒
agmh614d.pdf
AGMH614D General Description Product Summary The AGMH614D combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 11m 50A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize... See More ⇒
agmh614h.pdf
AGMH614H General Description Product Summary The AGMH614H combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 11m 50A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to minimize... See More ⇒
agmh612d.pdf
AGMH612D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,... See More ⇒
Detailed specifications: AGM308MAR, AGM308MBP, AGMH403A1, AGMH605C, AGMH606C, AGMH606H, AGMH6080H, AGMH612D, STP75NF75, AGMH614D, AGMH614H, AGMH70N70C, AGMH70N70D, AGMH70N90C, AGMH70N90H, AGML315ME, AGMS5N50D
Keywords - AGMH614C MOSFET specs
AGMH614C cross reference
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AGMH614C substitution
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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