AGMH614D Specs and Replacement
Type Designator: AGMH614D
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 66 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 119 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: TO252
AGMH614D substitution
- MOSFET ⓘ Cross-Reference Search
AGMH614D datasheet
agmh614d.pdf
AGMH614D General Description Product Summary The AGMH614D combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 11m 50A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize... See More ⇒
agmh614h.pdf
AGMH614H General Description Product Summary The AGMH614H combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 60V 11m 50A Features Advance high cell density Trench technology TO-263 Pin Configuration Low R to minimize... See More ⇒
agmh614c.pdf
AGMH614C Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,... See More ⇒
agmh612d.pdf
AGMH612D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,... See More ⇒
Detailed specifications: AGM308MBP, AGMH403A1, AGMH605C, AGMH606C, AGMH606H, AGMH6080H, AGMH612D, AGMH614C, 2N7002, AGMH614H, AGMH70N70C, AGMH70N70D, AGMH70N90C, AGMH70N90H, AGML315ME, AGMS5N50D, AGM308MN
Keywords - AGMH614D MOSFET specs
AGMH614D cross reference
AGMH614D equivalent finder
AGMH614D pdf lookup
AGMH614D substitution
AGMH614D replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
🌐 : EN ES РУ
LIST
Last Update
MOSFET: AUN084N10 | AUN065N10 | AUN063N10 | AUN062N08BG | AUN060N08AG | AUN053N10 | AUN050N08BGL | AUN045N085 | AUN042N055 | AUN036N10
Popular searches
mj15025 | mp1620 | kta1381 | bf494 | 2sc1885 | skd502t | 2sb754 | 2sc2362