AGMH12N10I MOSFET: N-Ch, 100V, 65A. Full datasheet with pinout, specifications and replacement transistor list

AGMH12N10I Datasheet (PDF)

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AGMH12N10ICharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.71AGMH12N10IGate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I =250uA TH

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AGMH12N10C General DescriptionProduct SummaryThe AGMH12N10C combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.100V 9.6m 55A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R to m

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AGMH12N10DCharacteristics Curve Typ. output characteristics Typ. drain-source on resistance I =f(V ) R =f(I ) D DS DS(on) DTyp. transfer characteristics Drain-source on-state resistance I =f(V ) R =f(T );I =20A; V =10V D GS DS(on) j D GSwww.agm-mos.com 3 VER2.71AGMH12N10DAGMH12N10DGate Threshold Voltage Drain-source breakdown voltage V =f(T ); I =250uA V =f(T ); I

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AGMH12H05H General DescriptionProduct SummaryThe AGMH12H05H combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.120V 4.5m 125A FeaturesAdvance high cell density Trench technologyTO-263 Pin ConfigurationLow R to

Datasheet: AGMH035N10C , AGMH035N10H , AGMH03N85C , AGMH056N08A , AGMH056N08C , AGMH056N08HM1 , AGMH065N10A , AGMH12N10D , IRF2807 , AGMH1405C , AGMH18N20C , AGMH20P15D , AGMH402C , , , , .