AGM3407E PDF and Equivalents Search

 

AGM3407E Specs and Replacement

Type Designator: AGM3407E

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 58 nS

Cossⓘ - Output Capacitance: 89 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: SOT23

AGM3407E substitution

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AGM3407E datasheet

 ..1. Size:975K  cn agmsemi
 agm3407e.pdf pdf_icon

AGM3407E

AGM3407E Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =-250 A -30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =-30V,V =0V -- -- -1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltag... See More ⇒

 8.1. Size:1838K  cn agmsemi
 agm3404e.pdf pdf_icon

AGM3407E

AGM3404E Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V ... See More ⇒

 8.2. Size:1777K  cn agmsemi
 agm3400el.pdf pdf_icon

AGM3407E

AGM3400EL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 12V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V... See More ⇒

 8.3. Size:1748K  cn agmsemi
 agm3404el.pdf pdf_icon

AGM3407E

AGM3404EL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 30 -- -- V GS D DSS Zero Gate Voltage Drain Current V =30V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V... See More ⇒

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Detailed specifications: AGMH065N10A, AGMH12N10D, AGMH12N10I, AGMH1405C, AGMH18N20C, AGMH20P15D, AGMH402C, AGM3404EL, IRF2807, AGM3415E, AGM3416E, AGM3416EL, AGM4005LL, AGM4005LLM1, AGM4008LL, AGM4012A, AGM4018S

Keywords - AGM3407E MOSFET specs

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