AGM4012A MOSFET Datasheet: N-Ch, 40V, 160A. Full specification with pinout and replacement list

AGM4012A Specs and Replacement

Type Designator: AGM4012A

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 114 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6.7 nS

Cossⓘ - Output Capacitance: 1810 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm

Package: PDFN5X6

AGM4012A substitution

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AGM4012A datasheet

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agm4012a.pdf pdf_icon

AGM4012A General Description Product Summary The AGM4012A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery 40V 1.1m 160A protection applications. PDFN5*6 Pin Configuration Features Advance high cell density Trench technology Low R to mini... See More ⇒

8.1. Size:1169K cn agmsemi
agm401ll.pdf pdf_icon

AGM401LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 45 -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 -- V Gate Threshold Voltage V =V... See More ⇒

8.2. Size:1901K cn agmsemi
agm401c.pdf pdf_icon

AGM401C General Description Product Summary The AGM401C combines advanced trenchMOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. 40V 1.2m 220A Features Advance high cell density Trench technology TO-220 Pin Configuration Low R to minimize... See More ⇒

8.3. Size:824K cn agmsemi
agm4018s.pdf pdf_icon

AGM4018S Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =250 A 48 -- -- V GS D Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =-... See More ⇒