AGM4018S Datasheet and Replacement

AGM4018STable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 48 -- -- VGS DZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I =-

AGM401LLTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 40 45 -- VGS DDSSZero Gate Voltage Drain Current V =40V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100--V Gate Threshold Voltage V =V

AGM401C General DescriptionProduct SummaryThe AGM401C combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.40V 1.2m220A FeaturesAdvance high cell density Trench technologyTO-220 Pin Configuration Low R to minimize

AGM4012A General DescriptionProduct SummaryThe AGM4012A combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and battery40V 1.1m 160Aprotection applications.PDFN5*6 Pin Configuration FeaturesAdvance high cell density Trench technology Low R to mini

AGM401Awww.agm-mos.com 3 VER2.68AGM401Awww.agm-mos.com 5 VER2.68AGM401APDFN5*6 Marking Instructions:Model1:Model2:www.agm-mos.com 7 VER2.68AGM401ADisclaimer:The information provided in this document is believed to be accurate and reliable.However,Shenzhen Core Control Source Electronics Technology Co., Ltd. does notassume any responsibility for the following c