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AGM665D Specs and Replacement

Type Designator: AGM665D

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 15 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 28 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.08 Ohm

Package: TO252

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AGM665D datasheet

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AGM665D

AGM665D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =... See More ⇒

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 agm665e.pdf pdf_icon

AGM665D

AGM665E Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I =... See More ⇒

Detailed specifications: AGM4025D, AGM628M, AGM628MAP, AGM628MD, AGM628MN, AGM628S, AGM655D, AGM65R380F, RU7088R, AGM665E, AGM6N20D, AGM7N65D, AGM85P10A, AGM85P10D, AGMH022N10H, AGMH022N10LL, AGM4025Q

Keywords - AGM665D MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 

 

 

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