AGMH022N10H Datasheet and Replacement

AGMH022N10H General DescriptionProduct SummaryThe AGMH022N10H combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is ideal switch and batteryfor loadBVDSS RDSON IDprotection applications.100V 2.2m 220A FeaturesAdvance high cell density Trench technologyTO-263 Pin ConfigurationLow R

AGMH022N10LLTypical Electrical and Thermal CharacteristicsVds Drain-Source Voltage (V) TJ-Junction Temperature()Figure 1 Output Characteristics Figure 4 Rdson-Junction TemperatureVgs Gate-Source Voltage (V) Qg Gate Charge (nC)Figure 2 Transfer Characteristics Figure 5 Gate ChargeI Drain Current (A) Vsd Source-Drain Voltage (V)D-Figure 3 Rdson- Drain Current Figure 6 Sourc

AGMH022P10H General DescriptionProduct SummaryThe AGMH022P10H combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -100V 15m -65Aprotection applications.TO-263 Pin Configuration Features Advance high cell density Trench technologyR to minimize c

AGMH03N85CFigure 5. Transient Thermal ImpedanceFigure 7. Source-Drain Diode ForwardFigure 6. Typical Transfer Characteristics CharacteristicsFigure 13. Typical Gate Charge vs Gate-SourceFigure 12. Capacitance Characteristics Voltagewww.agm-mos.com 4 VER2.73AGMH03N85C Test Circuit and WaveformFigure 14. Resistive Switching Test Circuit Figure 15. Resistive Switching Wav

AGMH056N08HM1Typical Characteristics3.980Notes:10V,9V,8V,7V,6VIDS= 250uA1. 250s pulse test3.62. Tj=25C3.3603.0Max2.7Typ2.440VGS= 5V 2.1Min1.8201.5VGS= 4.5V 1.20.900 25 50 75 100 125 150 175 2000 1 2 3 4 5VDS, Drain -Source Voltage (V)Tj - Junction Temperature (C)Fig1. Typical Output CharacteristicsFig2. Typical V Gate -So

AGMH035N10H General DescriptionThe AGMH035N10H combines advanced trench Product SummaryMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications. Features100V 3.5m 160AAdvance high cell density Trench technologyTO-263 Pin ConfigurationLow R to

AGMH035N10C General DescriptionProduct SummaryThe AGMH035N10C combines advanced trenchMOSFET technology with a low resistance packageto provide extremely low R .DS(ON)device is idealThis for load switch and batteryBVDSS RDSON IDprotection applications.100V 3.6m 150A FeaturesAdvance high cell density Trench technologyTO-220 Pin ConfigurationLow R t

AGMH065N10A General DescriptionProduct SummaryThe AGMH065N10A combines advanced trenchMOSFET technology with a low resistance packageto provideextremely low R .DS(ON)This device is ideal switch and battery BVDSS RDSON IDfor loadprotection applications.100V 5.8m 95A FeaturesAdvance high cell density Trench technologyPDFN5*6 Pin ConfigurationLow R t

AGMH056N08ATypical Characteristics3.980Notes:10V,9V,8V,7V,6VIDS= 250uA1. 250s pulse test3.62. Tj=25C3.3603.0Max2.7Typ2.440VGS= 5V 2.1Min1.8201.5VGS= 4.5V 1.20.900 25 50 75 100 125 150 175 2000 1 2 3 4 5VDS, Drain -Source Voltage (V)Tj - Junction Temperature (C)Fig1. Typical Output CharacteristicsFig2. Typical V Gate -Sour

AGMH035N10ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 100 -- -- VGS DDSSZero Gate Voltage Drain Current V =100V,V =0V -- -- 1 ADS GSIDSSV =20V,V =0V -- -- nAGS DSIGSS Gate-Body Leakage Current100VGS(th) Gate Threshold Volta

AGMH056N08CTypical Characteristics3.980Notes:10V,9V,8V,7V,6VIDS= 250uA1. 250s pulse test3.62. Tj=25C3.3603.0Max2.7Typ2.440VGS= 5V 2.1Min1.8201.5VGS= 4.5V 1.20.900 25 50 75 100 125 150 175 2000 1 2 3 4 5VDS, Drain -Source Voltage (V)Tj - Junction Temperature (C)Fig1. Typical Output CharacteristicsFig2. Typical V Gate -Sour