AGM403AP MOSFET Datasheet: N-Ch, 40V, 65A. Full specification with pinout and replacement list

AGM403AP Specs and Replacement

Type Designator: AGM403AP

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 69 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 380 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0036 Ohm

Package: PDFN3.3X3.3

AGM403AP substitution

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AGM403AP datasheet

..1. Size:845K cn agmsemi
agm403ap.pdf pdf_icon

AGM403AP N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.8 1.8 1.4 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 0 50 100 150 TJ ,Junction Temperature ( ) TJ , Junction Temperature ( ) Fig.5 Normalized V vs T Fig.6 Normalized R vs T ... See More ⇒

7.1. Size:1482K cn agmsemi
agm403a1.pdf pdf_icon

AGM403A1 Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V ... See More ⇒

7.2. Size:1175K cn agmsemi
agm403a1-ku.pdf pdf_icon

AGM403A1-KU General Description Product Summary The AGM403A1-KU combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. 40V 2.7m 120A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R t... See More ⇒

8.1. Size:1291K cn agmsemi
agm403q.pdf pdf_icon

AGM403Q N-Channel Typical Characteristics Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs G-S Voltage Fig.3 Source Drain Forward Characteristics Fig.4 Gate-Charge Characteristics 1.8 1.8 1.4 1.4 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 150 -50 0 50 100 150 TJ ,Junction Temperature ( ) TJ , Junction Temperature ( ) Fig.5 Normalized V vs T Fig.6 Normalized R vs T ... See More ⇒