All MOSFET. AGM404AP1 Datasheet

 

AGM404AP1 Datasheet and Replacement


   Type Designator: AGM404AP1
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 28 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 46 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 49.5 nS
   Cossⓘ - Output Capacitance: 321 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: PDFN3.3X3.3
 

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AGM404AP1 Datasheet (PDF)

 ..1. Size:991K  cn agmsemi
 agm404ap1.pdf pdf_icon

AGM404AP1

AGM404AP1 General DescriptionProduct SummaryThe AGM404AP1 combines advanced trench MOSFETtotechnology with a low resistance package provideextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal load switch and battery protectionfor40V 4.4m 46Aapplications. Features PDFN3.3*3.3 Pin ConfigurationAdvance high cell density Trench technologyLow R to

 7.1. Size:1229K  cn agmsemi
 agm404a.pdf pdf_icon

AGM404AP1

AGM404ATypical Performance CharacteristicsFigure 2: Typical Transfer CharacteristicsFigure1: Output CharacteristicsID (A)ID (A)12012010V1001004.5V 4V808060603.5V4040125252020VGS=3VVDS(V)VGS(V)000 1.0 2.0 3.0 4.0 5.00 2 4 6 8 10Figure 4: Body Diode CharacteristicsFigure 3:On-resistance vs. Drain CurrentIS(A)RDS(ON) (m)

 8.1. Size:1190K  cn agmsemi
 agm404q.pdf pdf_icon

AGM404AP1

AGM404QElectrical Characteristics Diagrams100 50VGS = 6 VVDS = 5 V90VGS = 4.5 V80 40VGS = 4 V70 VGS = 10 V60 30VGS = 3.5 V5040 203012525VGS = 3 V20 10100 00 0.5 1 1.5 2 0 1 2 3 4 5 6VGS (V)VDS (V)Figure 2: Transfer CharacteristicsFigure 1: On-Region Characteristics 102.191.9VGS = 4.5 V VGS = 10 V81.7ID = 20 A71.56 1

 8.2. Size:555K  cn agmsemi
 agm404d.pdf pdf_icon

AGM404AP1

AGM404DGM General DescriptionProduct SummaryThe AGM404D combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and battery40V 4.5m 82Aprotection applications.TO-252 Pin Configuration FeaturesAdvance high cell density Trench technology Low R to mini

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Datasheet: AGM402Q , AGM403A1 , AGM403A1-KU , AGM403AP , AGM403D1 , AGM403DG , AGM403Q , AGM404A , IRFP260N , , , , , , , , .

Keywords - AGM404AP1 MOSFET datasheet

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