SLB40N26C Specs and Replacement
Type Designator: SLB40N26C
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 256 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 260 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 370 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
Package: D2PAK
SLB40N26C substitution
- MOSFET ⓘ Cross-Reference Search
SLB40N26C datasheet
Detailed specifications: AGM615D, AGM615MN, AGM615MNA, FTP16N06A, HCA60R070F, HYG043N10NS2P, HYG043N10NS2B, RM150N100HD, K3569, SLI40N26C, AGM404D, AGM404Q, AGM405A, AGM405AP1, AGM405AP2, AGM405D, AGM405DG
Keywords - SLB40N26C MOSFET specs
SLB40N26C cross reference
SLB40N26C equivalent finder
SLB40N26C pdf lookup
SLB40N26C substitution
SLB40N26C replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: SVD3205T | APM2701AC | CMI100N04 | CS7N65FA9R | VS1606GS | SM1691OSCS
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