DMN6068SE
MOSFET. Datasheet pdf. Equivalent
Type Designator: DMN6068SE
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 3.7
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 5.6
A
Qgⓘ - Total Gate Charge: 5.55
nC
Cossⓘ -
Output Capacitance: 502
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.1
Ohm
Package:
SOT223
DMN6068SE
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
DMN6068SE
Datasheet (PDF)
..1. Size:624K diodes
dmn6068se.pdf
A Product Line ofDiodes IncorporatedDMN6068SE60V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistanceTA = 25C Fast switching speed 68m @ VGS= 10V 5.6A Green component and RoHS compliant (Note 1) 60V Qualified to AEC-Q101 Stan
0.1. Size:885K cn vbsemi
dmn6068se-13.pdf
DMN6068SE-13www.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)Definition0.029 at VGS = 10 V 7.0 TrenchFET Power MOSFETs600.033 at VGS = 4.5 V 5.6 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/ECDSOT-223D GSDGSN-Channel MOSF
7.1. Size:667K diodes
dmn6068lk3.pdf
A Product Line ofDiodes IncorporatedDMN6068LK360V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits 100% Unclamped Inductive Switch (UIS) test in production ID V(BR)DSS RDS(on) Low on-resistance TA = 25C Fast switching speed 68m @ VGS= 10V 8.5A Green component and RoHS compliant (Note 1) 60V Qualified to AEC-Q101 Stan
7.2. Size:892K cn vbsemi
dmn6068lk3-13.pdf
DMN6068LK3-13www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.073 at VGS = 10 V 18.2 Material categorization:60 19.8For definitions of compliance please see0.085 at VGS = 4.5 V 13.2TO-252APPLICATIONSD DC/DC Converters DC/AC Inverters
7.3. Size:266K inchange semiconductor
dmn6068lk3.pdf
isc N-Channel MOSFET Transistor DMN6068LK3FEATURESDrain Current I = 8.5A@ T =25D CDrain Source Voltage-: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 68m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur
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