AGM40P100A Specs and Replacement
Type Designator: AGM40P100A
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 173 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 520 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0065 Ohm
Package: PDFN5X6
AGM40P100A substitution
- MOSFET ⓘ Cross-Reference Search
AGM40P100A datasheet
agm40p100a.pdf
AGM40P100A Typical Electrical And Thermal Characteristics (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON) www.agm-mos.com 3 VER2.69 AGM40P100A Figure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-... See More ⇒
agm40p100h.pdf
AGM40P100H Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -40 -- -- V GS D Zero Gate Voltage Drain Current V =-40V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage... See More ⇒
agm40p100c.pdf
AGM40P100C Table 3. Electrical Characteristics (Tj=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -40 -- -- V GS D Zero Gate Voltage Drain Current V =-40V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage... See More ⇒
agm40p13s.pdf
AGM40P13S General Description Product Summary The AGM40P13S combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -40V 13m -8A protection applications. SOP8 Pin Configuration Features Advance high cell density Trench technology Low R to minimize cond... See More ⇒
Detailed specifications: AGM60P90D, AGM610M, AGM610MN, AGM406Q, AGM408M, AGM408MN, AGM409A, AGM409D, 2N60, AGM40P100C, AGM40P100H, AGM40P13S, AGM40P150C, AGM40P25A, AGM40P25AP, AGM40P26AP, AGM40P26E
Keywords - AGM40P100A MOSFET specs
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