AGM40P25AP Specs and Replacement
Type Designator: AGM40P25AP
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 19 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 16 nS
Cossⓘ - Output Capacitance: 63.6 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.036 Ohm
Package: PDFN3.3X3.3
AGM40P25AP substitution
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AGM40P25AP datasheet
agm40p25ap.pdf
AGM40P25AP Typical Electrical And Thermal Characteristics (Curves) Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON) www.agm-mos.com 3 VER2.7 AGM40P25AP Typical Electrical And Thermal Characteristics (Curves) Figure 7. Gat... See More ⇒
agm40p25a.pdf
AGM40P25A Table 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -40 -- -- V Zero Gate Voltage Drain Current V =-40V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V =V... See More ⇒
agm40p26e.pdf
AGM40P26E General Description Product Summary The AGM40P26E combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -40V 36m -5.8A protection applications. SOT23-3 Pin Configuration Features Advance high cell density Trench technology Low R to minimize... See More ⇒
agm40p26ap.pdf
AGM40P26AP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -40 -- -- V GS D Zero Gate Voltage Drain Current V =-40V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage... See More ⇒
Detailed specifications: AGM409A, AGM409D, AGM40P100A, AGM40P100C, AGM40P100H, AGM40P13S, AGM40P150C, AGM40P25A, STP65NF06, AGM40P26AP, AGM40P26E, AGM40P26S, AGM609AP, AGM609C, AGM609D, AGM609F, AGM609MNA
Keywords - AGM40P25AP MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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