AGM40P26AP MOSFET Datasheet: P-Ch, 40V, 6A. Full specification with pinout and replacement list

AGM40P26AP Specs and Replacement

Type Designator: AGM40P26AP

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 28 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7 nS

Cossⓘ - Output Capacitance: 160 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: PDFN3.3X3.3

AGM40P26AP substitution

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AGM40P26AP datasheet

..1. Size:1612K cn agmsemi
agm40p26ap.pdf pdf_icon

AGM40P26AP Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -40 -- -- V GS D Zero Gate Voltage Drain Current V =-40V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltage... See More ⇒

6.1. Size:1520K cn agmsemi
agm40p26e.pdf pdf_icon

AGM40P26E General Description Product Summary The AGM40P26E combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -40V 36m -5.8A protection applications. SOT23-3 Pin Configuration Features Advance high cell density Trench technology Low R to minimize... See More ⇒

6.2. Size:1646K cn agmsemi
agm40p26s.pdf pdf_icon

AGM40P26S General Description Product Summary The AGM40P26S combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -40V 32m -6.0A protection applications. SOP8 Pin Configuration Features Advance high cell density Trench technology Low R to minimize co... See More ⇒

7.1. Size:1269K cn agmsemi
agm40p25a.pdf pdf_icon

AGM40P25A Table 2. P-Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage VGS=0V ID=-250 A -40 -- -- V Zero Gate Voltage Drain Current V =-40V,V =0V -1 DS GS I -- -- A DSS Gate-Body Leakage Current V = 20V,V =0V 100 GS DS I -- -- nA GSS V Gate Threshold Voltage V =V... See More ⇒