AGM60P20D Datasheet and Replacement

AGM60P20D General DescriptionProduct SummaryThe AGM60P20D combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotectionapplications.-60V 57m -18A Features Advance high cell density Trench technology TO-252 Pin ConfigurationLow R to minimize co

AGM60P20APTyp. output characteristics Typ. drain-source on resistance -I =f(-V ) R =f(-I ) D DS DS(on) D20030-10V-4.0V -4.5V25-5.0V15020-4.5V15-5.0V10 100-4.0V-10V50500 1 2 3 4 50 5 10 15 20-VDS[V]-ID[A]Typ. transfer characteristics Typ. forward transconductance -I =f(-V ) g =f(-I ) D GS fs D202015 1510 1055000 1 2 3 4 5

AGM60P20R General DescriptionProduct SummaryThe AGM60P20R combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotectionapplications.-60V 65m -10A Features Advance high cell density Trench technology SOT-223-3L Pin ConfigurationLow R to minimiz

AGM60P85EFigure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area www.agm-mos.com 4 VER2.65AGM60P85AP1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 5 VER2.65AGM60P85ESOT23-3Marking Instructions:www.agm-mos.com 7 VER2.65AGM60P85EDisclaimer:Th

AGM60P06SP-Channel Typical Characteristics 16012ID=-3AVGS=-3V1012086VGS=-10V4 80VGS=-7VVGS=-5V2VGS=-4.5V0 400 0.5 1 1.5 2 2 4 6 8 10-VDS , Drain-to-Source Voltage (V) -VGS (V)Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source 1210ID=-3A108866TJ=150 TJ=254422000.2 0.4 0.6 0.8 1 0 5 10 15 20 25-V

AGM60P35FTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -60 -- -- VGS DZero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM60P14A General DescriptionThe AGM60P14A combines advanced trench MOSFETProduct Summaryto providetechnology with a low resistance packageextremely low RDS(ON)This device is ideal and batteryfor load switchBVDSS RDSON IDprotectionapplications.-60V 18m -52A Features Advance high cell density Trench technologyPDFN5*6 Pin ConfigurationLow R to minimize

AGM60P100ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -60 -- -- VGS DZero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM60P85D Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON)www.agm-mos.com 3 VER2.65AGM60P85DFigure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area

AGM60P30AP General DescriptionProduct SummaryThe AGM60P30AP combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotectionapplications.-60V 40m -30A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin ConfigurationLow R to mini

AGM60P30CTypical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 40 35VGS= -5,-6,-7,-8,-9,-10V35-4V3030VGS= -4.5V252520201510VGS= -10V155 -3V0 100.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40-VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage 60 1.8IDS = -250AID

AGM60P90DTypical CharacteristicsFig-VDS, -Drain -Source Voltage (V)Tj - Junction Temperature (C)Fig1. Typical Output CharacteristicsFig2. Typical -V Gate -Source Voltage Vs. TjGS(TH)- - - -FigTj - Junction Temperature (C)-VGS, -Gate -Source Voltage (V)Fig4. Typical Normalized On-Resistance Vs. TjFig3. Typical Transfer Characteristics-ID, -Drain-Source Curre

AGM60P14D General DescriptionProduct SummaryThe AGM60P14D combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal and batteryfor load switch-60V 18m -52Aprotectionapplications.TO-252 Pin Configuration Features Advance high cell density Trench technologyLow R to minimize

AGM60P14AP General DescriptionThe AGM60P14AP combines advanced trenchProduct SummarytoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)This device is ideal and batteryfor load switchBVDSS RDSON IDprotectionapplications. Features-60V 18m -52A Advance high cell density Trench technologyPDFN3.3*3.3 Pin ConfigurationLow R to m

AGM60P30DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -60 -- -- VGS DZero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM60P40ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -60 -- -- VGS DZero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM60P30A General DescriptionProduct SummaryThe AGM60P30A combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDprotectionThis device is ideal for load switch and batteryapplications.-60V 50m -30A Features Advance high cell density Trench technology PDFN5*6 Pin ConfigurationLow R to minimize c

AGM60P90AFigure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area www.agm-mos.com 4 VER2.66AGM60P90ATest Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 5 VER2.66AGM60P90ADimensionsPDFN5*6D2DMILLIMETERSYMBOLMIN Typ. MAXA 0.

AGM60P85AP General DescriptionProduct SummaryThe AGM60P85AP combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -60V 80m -14Aprotection applications.PDFN3.3*3.3 Pin Configuration Features Advance high cell density Trench technologyR to minimize

AGM60P40DTypical Characteristics 3012ID=-12A1028VGS=-10V8VGS=-7V26VGS=-5V6VGS=-4.5V24422VGS=-3V20 200 0.25 0.5 0.75 1 2 4 6 8 10-VDS Drain-to-Source Voltage (V) -VGS (V)Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source 1210VDS=-20VID=-12A108866TJ=150 TJ=254422000 20 40 600.2 0.4 0.6 0.