AGM40P35A Specs and Replacement

Type Designator: AGM40P35A

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 60 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 360 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: PDFN5X6

AGM40P35A substitution

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AGM40P35A datasheet

 ..1. Size:527K  cn agmsemi
agm40p35a.pdf pdf_icon

AGM40P35A

AGM40P35A General Description Product Summary The AGM40P35A combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal and battery for load switch -40V 11m -60A protection applications. PDFN5*6 Pin Configuration Features Advance high cell density Trench technology Low R to minimize ... See More ⇒

 0.1. Size:963K  cn agmsemi
agm40p35ap.pdf pdf_icon

AGM40P35A

AGM40P35AP General Description Product Summary The AGM40P35AP combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -40V 11m -35A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mini... See More ⇒

 0.2. Size:799K  cn agmsemi
agm40p35a-ku.pdf pdf_icon

AGM40P35A

AGM40P35A-KU General Description The AGM40P35A-KU combines advanced trench Product Summary to MOSFET technology with a low resistance package provide extremely low R DS(ON) This device is ideal for load switch and battery protection BVDSS RDSON ID applications. -40V 15m -60A Features Advance high cell density Trench technology PDFN5*6 Pin Configuration Low R to min... See More ⇒

 6.1. Size:1002K  cn agmsemi
agm40p35d.pdf pdf_icon

AGM40P35A

AGM40P35D General Description Product Summary The AGM40P35D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -40V 11m -60A Features Advance high cell density Trench technology TO-252 Pin Configuration Low R to minimize co... See More ⇒

Detailed specifications: AGM60P14AP, AGM60P14D, AGM60P20AP, AGM60P20D, AGM60P20R, AGM40P30A, AGM40P30AP, AGM40P30D, IRF3205, AGM40P35A-KU, AGM40P35AP, AGM40P35D, AGM40P55A, AGM40P55AP, AGM40P55D, AGM40P65AP, AGM40P65E

Keywords - AGM40P35A MOSFET specs

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 AGM40P35A replacement

Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs