AGM6080C Datasheet and Replacement

AGM6080C General DescriptionProduct SummaryThe AGM6080C combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.60V 7.5m80A FeaturesAdvance high cell density Trench technologyTO-220 Pin Configuration Low R to minimiz

AGM6080D General DescriptionProduct SummaryThe AGM6080D combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.60V 6.0m82A FeaturesAdvance high cell density Trench technologyTO-252 Pin Configuration Low R to minimiz

AGM608C General DescriptionProduct SummaryThe AGM608C combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.60V 4.8m90A FeaturesAdvance high cell density Trench technologyTO-220 Pin Configuration Low R to minimize

AGM60P85EFigure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area www.agm-mos.com 4 VER2.65AGM60P85AP1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 5 VER2.65AGM60P85ESOT23-3Marking Instructions:www.agm-mos.com 7 VER2.65AGM60P85EDisclaimer:Th

AGM60P20APTyp. output characteristics Typ. drain-source on resistance -I =f(-V ) R =f(-I ) D DS DS(on) D20030-10V-4.0V -4.5V25-5.0V15020-4.5V15-5.0V10 100-4.0V-10V50500 1 2 3 4 50 5 10 15 20-VDS[V]-ID[A]Typ. transfer characteristics Typ. forward transconductance -I =f(-V ) g =f(-I ) D GS fs D202015 1510 1055000 1 2 3 4 5

AGM609C General DescriptionProduct SummaryThe AGM609C combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDdevice is idealThis for load switch and batteryprotection applications.60V 6.3m 80A Features TO-220 Pin ConfigurationAdvance high cell density Trench technology Low R to minimize

AGM605F General DescriptionProduct SummaryThe AGM605F combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.60V 4.5m80A FeaturesAdvance high cell density Trench technologyTO-220F Pin Configuration Low R to minimize

AGM6035FTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I =2

AGM609MNA10014VDS=5V10V 8V12806V10VGS=4V608640420Tj=1252VGS=3VTj=250 00 1 2 3 4 5 0 1 2 3 4VDS (V) VGS (V)Fig1. Typical Output Characteristics Fig2. Typical Transfer Characteristics 181015VGs=10V129VGs=4.5V 163Tj=25Tj=1250 0.10 25 50 75 100 125 150 175 200 0.0 0.4 0.8 1.2 1.6Tj-Iunction Temperature () VSD

AGM6014ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,

AGM60P06SP-Channel Typical Characteristics 16012ID=-3AVGS=-3V1012086VGS=-10V4 80VGS=-7VVGS=-5V2VGS=-4.5V0 400 0.5 1 1.5 2 2 4 6 8 10-VDS , Drain-to-Source Voltage (V) -VGS (V)Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source 1210ID=-3A108866TJ=150 TJ=254422000.2 0.4 0.6 0.8 1 0 5 10 15 20 25-V

AGM60P35FTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -60 -- -- VGS DZero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM609F General DescriptionProduct SummaryThe AGM609F combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDdevice is idealThis for load switch and batteryprotection applications.60V 6.3m 80A Features TO-220F Pin ConfigurationAdvance high cell density Trench technology Low R to minimize

AGM60P14A General DescriptionThe AGM60P14A combines advanced trench MOSFETProduct Summaryto providetechnology with a low resistance packageextremely low RDS(ON)This device is ideal and batteryfor load switchBVDSS RDSON IDprotectionapplications.-60V 18m -52A Features Advance high cell density Trench technologyPDFN5*6 Pin ConfigurationLow R to minimize

AGM60P100ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -60 -- -- VGS DZero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM60P20D General DescriptionProduct SummaryThe AGM60P20D combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotectionapplications.-60V 57m -18A Features Advance high cell density Trench technology TO-252 Pin ConfigurationLow R to minimize co

AGM609STable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I =

AGM60P20R General DescriptionProduct SummaryThe AGM60P20R combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotectionapplications.-60V 65m -10A Features Advance high cell density Trench technology SOT-223-3L Pin ConfigurationLow R to minimiz

AGM609D General DescriptionProduct SummaryThe AGM609D combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and batteryprotection applications.60V 6.3m 60A Features TO-252 Pin ConfigurationAdvance high cell density Trench technology Low R to minimize

AGM60P85D Figure 1. Output Characteristics Figure 2. Transfer Characteristics Figure 3. Power Dissipation Figure 4. Drain Current Figure 5. BV vs Junction Temperature Figure 6. R vs Junction Temperature DSS DS(ON)www.agm-mos.com 3 VER2.65AGM60P85DFigure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area

AGM60P30AP General DescriptionProduct SummaryThe AGM60P30AP combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotectionapplications.-60V 40m -30A Features Advance high cell density Trench technology PDFN3.3*3.3 Pin ConfigurationLow R to mini

AGM60P30CTypical Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 40 35VGS= -5,-6,-7,-8,-9,-10V35-4V3030VGS= -4.5V252520201510VGS= -10V155 -3V0 100.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40-VDS - Drain-Source Voltage (V) -ID - Drain Current (A) Transfer Characteristics Normalized Threshold Voltage 60 1.8IDS = -250AID

AGM602C General DescriptionProduct SummaryThe AGM602C combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.60V 2.3m210A FeaturesAdvance high cell density Trench technologyTO-220 Pin Configuration Low R to minimize

AGM60P90DTypical CharacteristicsFig-VDS, -Drain -Source Voltage (V)Tj - Junction Temperature (C)Fig1. Typical Output CharacteristicsFig2. Typical -V Gate -Source Voltage Vs. TjGS(TH)- - - -FigTj - Junction Temperature (C)-VGS, -Gate -Source Voltage (V)Fig4. Typical Normalized On-Resistance Vs. TjFig3. Typical Transfer Characteristics-ID, -Drain-Source Curre

AGM60P14D General DescriptionProduct SummaryThe AGM60P14D combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDThis device is ideal and batteryfor load switch-60V 18m -52Aprotectionapplications.TO-252 Pin Configuration Features Advance high cell density Trench technologyLow R to minimize

AGM609AP General DescriptionProduct SummaryThe AGM609AP combines advanced Super Trench lltoMOSFET technology with a low resistance packageprovide extremely low R .DS(ON)BVDSS RDSON IDThis device is ideal load switch and battery protection forapplications.60V 7.5m 58A FeaturesAdvance high cell density Trench technologyPDFN3.3*3.3 Pin Configuration

AGM603C100010 V5 V6 VVDS= 10 V4007 VTj = 25 4.5 V1003004 V102003.5 V11003 VVGS= 2.5 V0.100 2 4 6 8 100 1 2 3 4 5 6 7 8 9 10VDS, Drain-source voltage (V) VGS, Gate-source voltage(V)Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics 10.0105f = 100 kHz ID = 25 AVGS = 0 VVDS = 30 V104 7.5Ciss103 5.0C

AGM603F100010 V5 V6 VVDS= 10 V4007 VTj = 25 4.5 V1003004 V102003.5 V11003 VVGS= 2.5 V0.100 2 4 6 8 100 1 2 3 4 5 6 7 8 9 10VDS, Drain-source voltage (V) VGS, Gate-source voltage(V)Figure 1, Typ. output characteristics Figure 2, Typ. transfer characteristics 10.0105f = 100 kHz ID = 25 AVGS = 0 VVDS = 30 V104 7.5Ciss103 5.0C

AGM605A General DescriptionProduct SummaryThe AGM605A combines advanced trenchMOSFET to providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.60V 4.4m80A FeaturesAdvance high cell density Trench technologyPDFN5*6 Pin Configuration Low R to minimiz

AGM6035ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I =2

AGM60P14AP General DescriptionThe AGM60P14AP combines advanced trenchProduct SummarytoMOSFET technology with a low resistance packageprovideextremely low RDS(ON)This device is ideal and batteryfor load switchBVDSS RDSON IDprotectionapplications. Features-60V 18m -52A Advance high cell density Trench technologyPDFN3.3*3.3 Pin ConfigurationLow R to m

AGM606SElectrical characteristics diagramsDiagram 2: Max. transient thermal impedanceDiagram 1: Power dissipation (SOP-8) (SOP-8) 1011000.50.30.0510-10.020.010.110-2single pulse10-310-5 10-4 10-3 10-2 10-1 100 101 102 103tp [s]Ptot=f(TC) ZthJC=f(tp); parameter: D= tp/T Diagram 3: Safe operating area (SOP-8) Diagram 4: Typ. gate charge 1010210s

AGM603DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100--V Gate Threshold Voltage V =V

AGM60P30DTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -60 -- -- VGS DZero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM6018ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,

AGM60P40ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =-250A -60 -- -- VGS DZero Gate Voltage Drain Current V =-60V,V =0V -- -- -1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- 100 nAGS DSIGSSVGS(th) Gate Threshold Voltage

AGM60P30A General DescriptionProduct SummaryThe AGM60P30A combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low RDS(ON)BVDSS RDSON IDprotectionThis device is ideal for load switch and batteryapplications.-60V 50m -30A Features Advance high cell density Trench technology PDFN5*6 Pin ConfigurationLow R to minimize c

AGM60P90AFigure 7. Gate Charge Waveforms Figure 8. Capacitance Figure 9. Body-Diode Characteristics Figure 10. Maximum Safe Operating Area www.agm-mos.com 4 VER2.66AGM60P90ATest Circuit 1) EAS Test Circuits 2) Gate Charge Test Circuit 3) Switch Time Test Circuit www.agm-mos.com 5 VER2.66AGM60P90ADimensionsPDFN5*6D2DMILLIMETERSYMBOLMIN Typ. MAXA 0.

AGM605C General DescriptionProduct SummaryThe AGM605C combines advanced trenchMOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is ideal for load switch and batteryprotection applications.60V 4.5m80A FeaturesAdvance high cell density Trench technologyTO-220 Pin Configuration Low R to minimize

AGM6070A General DescriptionProduct SummaryThe AGM6070A combines advanced trench MOSFETto providetechnology with a low resistance packageextremely low R .DS(ON)BVDSS RDSON IDThis device is idealfor load switch and battery60V 7.0m 76Aprotection applications.PDFN5*6 Pin Configuration FeaturesAdvance high cell density Trench technologyLow R to mini

AGM601LLTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

AGM60P85AP General DescriptionProduct SummaryThe AGM60P85AP combines advanced trenchMOSFET technology with a low resistanceto provide extremely low R . BVDSS RDSON IDpackage DS(ON)This device isideal for load switch and battery -60V 80m -14Aprotection applications.PDFN3.3*3.3 Pin Configuration Features Advance high cell density Trench technologyR to minimize

AGM6014AP General DescriptionThe AGM6014AP combines advanced trenchMOSFET technology with a low resistance package Product Summaryto provide extremely low R .DS(ON)device is idealThis for load switch and batteryprotection applications.BVDSS RDSON ID Features60V 4.3m 72AAdvance high cell density Trench technology Low R to minimize conductive lossDS(ON)

AGM60P40DTypical Characteristics 3012ID=-12A1028VGS=-10V8VGS=-7V26VGS=-5V6VGS=-4.5V24422VGS=-3V20 200 0.25 0.5 0.75 1 2 4 6 8 10-VDS Drain-to-Source Voltage (V) -VGS (V)Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source 1210VDS=-20VID=-12A108866TJ=150 TJ=254422000 20 40 600.2 0.4 0.6 0.

AGM605QTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBVDSS Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I =25