AGM412D Datasheet. Specs and Replacement

Type Designator: AGM412D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 57 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 40 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 3.6 nS

Cossⓘ - Output Capacitance: 87.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm

Package: TO252

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AGM412D datasheet

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AGM412D

AGM412D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =... See More ⇒

 8.1. Size:1702K  cn agmsemi
agm412mpa.pdf pdf_icon

AGM412D

AGM412MPA Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V... See More ⇒

 8.2. Size:950K  cn agmsemi
agm412map.pdf pdf_icon

AGM412D

AGM412MAP General Description Product Summary The AGM412MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 40V 10m 22A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mi... See More ⇒

 8.3. Size:1048K  cn agmsemi
agm412s.pdf pdf_icon

AGM412D

AGM412S General Description The AGM412S combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. Features 40V 11m 13A Advance high cell density Trench technology SOP-8 Pin Configuration Low R to minimize c... See More ⇒

Detailed specifications: AGM605C, AGM605F, AGM605Q, AGM606S, AGM6070A, AGM6080C, AGM6080D, AGM608C, IRF630, AGM412MAP, AGM412MPA, AGM412S, AGM414MBP, AGM418M, AGM418MBP, AGM420MA, AGM420MAP

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