AGM412MAP Datasheet. Specs and Replacement
Type Designator: AGM412MAP 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 22 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 75 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
Package: PDFN3.3X3.3
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AGM412MAP substitution
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AGM412MAP datasheet
agm412map.pdf
AGM412MAP General Description Product Summary The AGM412MAP combines advanced trench MOSFET technology with a low resistance package to provide extremely low R . DS(ON) This device is ideal for load switch and battery BVDSS RDSON ID protection applications. Features 40V 10m 22A Advance high cell density Trench technology PDFN3.3*3.3 Pin Configuration Low R to mi... See More ⇒
agm412mpa.pdf
AGM412MPA Table 3. N- Channel Electrical Characteristics (TJ=25 unless otherwisenoted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS 100 I GSS VGS(th) Gate Threshold V... See More ⇒
agm412d.pdf
AGM412D Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 40 -- -- V GS D DSS Zero Gate Voltage Drain Current V =40V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage V =... See More ⇒
agm412s.pdf
AGM412S General Description The AGM412S combines advanced trench Product Summary MOSFET technology with a low resistance package to provide extremely low R . DS(ON) device is ideal This for load switch and battery BVDSS RDSON ID protection applications. Features 40V 11m 13A Advance high cell density Trench technology SOP-8 Pin Configuration Low R to minimize c... See More ⇒
Detailed specifications: AGM605F, AGM605Q, AGM606S, AGM6070A, AGM6080C, AGM6080D, AGM608C, AGM412D, IRF9540, AGM412MPA, AGM412S, AGM414MBP, AGM418M, AGM418MBP, AGM420MA, AGM420MAP, AGM420MBA
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