All MOSFET. ZXMN6A07F Datasheet

 

ZXMN6A07F MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN6A07F
   Marking Code: 7N6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.806 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 1.4 A
   Qgⓘ - Total Gate Charge: 3.2 nC
   Cossⓘ - Output Capacitance: 166 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm
   Package: SOT23

 ZXMN6A07F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN6A07F Datasheet (PDF)

 ..1. Size:531K  diodes
 zxmn6a07f.pdf

ZXMN6A07F ZXMN6A07F

ZXMN6A07F60V SOT23 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 1.4600.350 @ VGS= 4.5V 1.2DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

 ..2. Size:1319K  cn vbsemi
 zxmn6a07f.pdf

ZXMN6A07F ZXMN6A07F

ZXMN6A07Fwww.VBsemi.twN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Available TrenchFET Power MOSFET0.085 at VGS = 10 V 4.060 2.1 nC 100 % Rg Tested0.096 at VGS = 4.5 V 3.8 100 % UIS TestedAPPLICATIONS Battery Switch DC/DC ConverterDTO-236(SOT23)G

 0.1. Size:527K  zetex
 zxmn6a07fta.pdf

ZXMN6A07F ZXMN6A07F

ZXMN6A07F60V SOT23 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 1.4600.350 @ VGS= 4.5V 1.2DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

 0.2. Size:527K  zetex
 zxmn6a07ftc.pdf

ZXMN6A07F ZXMN6A07F

ZXMN6A07F60V SOT23 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 1.4600.350 @ VGS= 4.5V 1.2DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

 6.1. Size:530K  diodes
 zxmn6a07z.pdf

ZXMN6A07F ZXMN6A07F

ZXMN6A07Z60V SOT89 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 2.5600.350 @ VGS= 4.5V 2.1DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

 6.2. Size:527K  zetex
 zxmn6a07zta.pdf

ZXMN6A07F ZXMN6A07F

ZXMN6A07Z60V SOT89 N-channel enhancement mode mosfetSummaryV(BR)DSS RDS(on) ( ) ID (A)0.250 @ VGS= 10V 2.5600.350 @ VGS= 4.5V 2.1DescriptionDThis new generation trench MOSFET from Zetex utilizes a uniquestructure combining the benefits of low on-state resistance with fastswitching speed.GFeaturesS Low on-resistance Fast switching speed Low thresholdS

 6.3. Size:852K  cn vbsemi
 zxmn6a07zta.pdf

ZXMN6A07F ZXMN6A07F

ZXMN6A07ZTAwww.VBsemi.tw N-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)a Qg (Typ.) TrenchFET Power MOSFET0.076 at VGS = 4.5 V 7.1RoHS29 nC COMPLIANT60APPLICATIONS0.088 at VGS = 10 V 6.7 Load Switches for Portable DevicesDDGSG D SN-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 C, unless otherwi

Datasheet: DMN6068SE , DMN62D1SFB , DMN66D0LDW , DMN66D0LT , DMN66D0LW , ZXM64N035L3 , ZXMN4A06G , ZXMN4A06K , AON7506 , ZXMN6A07Z , ZXMN6A08E6 , ZXMN6A08G , ZXMN6A08K , ZXMN6A09DN8 , ZXMN6A09G , ZXMN6A09K , ZXMN6A11DN8 .

 

 
Back to Top