AGM55P10A Datasheet. Specs and Replacement

Type Designator: AGM55P10A  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 50 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 71 nS

Cossⓘ - Output Capacitance: 112 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm

Package: PDFN5X6

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AGM55P10A datasheet

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AGM55P10A

AGM55P10A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BVDSS Drain-Source Breakdown Voltage V =0V I =-250 A -100 -- -- V GS D Zero Gate Voltage Drain Current V =-100V,V =0V -- -- -1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- 100 nA GS DS I GSS VGS(th) Gate Threshold Voltag... See More ⇒

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AGM55P10A

AGM55P10D General Description Product Summary The AGM55P10D combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -100V 52m -30A Features TO-252 Pin Configuration Advance high cell density Trench technology Low R to min... See More ⇒

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AGM55P10A

AGM55P10S General Description Product Summary The AGM55P10S combines advanced trench MOSFET to provide technology with a low resistance package extremely low R . DS(ON) BVDSS RDSON ID This device is ideal for load switch and battery protection applications. -100V 65m -12A Features Advance high cell density Trench technology SOP8 Pin Configuration Low R to minim... See More ⇒

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AGM55P10A

AGM55N15A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 150 -- -- V GS D DSS Zero Gate Voltage Drain Current V =150V,V =0V -- -- 1 A DS GS I DSS V = 20V,V =0V -- -- nA GS DS IGSS Gate-Body Leakage Current 100 VGS(th) Gate Threshold Voltage... See More ⇒

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Detailed specifications: AGM425MC, AGM425MD, AGM425ME, AGM435E, AGM500P20D, AGM502, AGM55N15A, AGM55N15D, AON6380, AGM55P10D, AGM55P10S, AGM6014A, AGM6014AP, AGM6018A, AGM601LL, AP0903G, AP0903GD

Keywords - AGM55P10A MOSFET specs

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