All MOSFET. AGM6014AP Datasheet

 

 

AGM6014AP Datasheet and Replacement


   Type Designator: AGM6014AP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 54 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 72 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 631 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: PDFN3.3X3.3
 

 AGM6014AP substitution

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AGM6014AP Datasheet (PDF)

 ..1. Size:1169K  cn agmsemi
agm6014ap.pdf pdf_icon

AGM6014AP

AGM6014AP General DescriptionThe AGM6014AP combines advanced trenchMOSFET technology with a low resistance package Product Summaryto provide extremely low R .DS(ON)device is idealThis for load switch and batteryprotection applications.BVDSS RDSON ID Features60V 4.3m 72AAdvance high cell density Trench technology Low R to minimize conductive lossDS(ON)

 6.1. Size:1254K  cn agmsemi
agm6014a.pdf pdf_icon

AGM6014AP

AGM6014ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,

 8.1. Size:1276K  cn agmsemi
agm6018a.pdf pdf_icon

AGM6014AP

AGM6018ATable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,

 8.2. Size:934K  cn agmsemi
agm601ll.pdf pdf_icon

AGM6014AP

AGM601LLTable 3. Electrical Characteristics (TJ=25 unless otherwise noted)Symbol Parameter Conditions Min Typ Max UnitOn/Off StatesBV Drain-Source Breakdown Voltage V =0V I =250A 60 -- -- VGS DDSSZero Gate Voltage Drain Current V =60V,V =0V -- -- 1 ADS GSIDSSGate-Body Leakage Current V =20V,V =0V -- -- nAGS DSI GSS 100V Gate Threshold Voltage V =V ,I

Datasheet: AGM500P20D , AGM502 , AGM55N15A , AGM55N15D , AGM55P10A , AGM55P10D , AGM55P10S , AGM6014A , AON7506 , AGM6018A , AGM601LL , , , , , , .

History: AGM55P10D

Keywords - AGM6014AP MOSFET datasheet

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