AGM601LL Datasheet. Specs and Replacement
Type Designator: AGM601LL 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 178 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 223 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1847 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0016 Ohm
Package: TOLL
📄📄 Copy
AGM601LL substitution
- MOSFET ⓘ Cross-Reference Search
AGM601LL datasheet
agm601ll.pdf
AGM601LL Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,I ... See More ⇒
agm6014a.pdf
AGM6014A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,... See More ⇒
agm6018a.pdf
AGM6018A Table 3. Electrical Characteristics (TJ=25 unless otherwise noted) Symbol Parameter Conditions Min Typ Max Unit On/Off States BV Drain-Source Breakdown Voltage V =0V I =250 A 60 -- -- V GS D DSS Zero Gate Voltage Drain Current V =60V,V =0V -- -- 1.0 A DS GS I DSS Gate-Body Leakage Current V = 20V,V =0V -- -- nA GS DS I GSS 100 V Gate Threshold Voltage V =V ,... See More ⇒
agm6014ap.pdf
AGM6014AP General Description The AGM6014AP combines advanced trench MOSFET technology with a low resistance package Product Summary to provide extremely low R . DS(ON) device is ideal This for load switch and battery protection applications. BVDSS RDSON ID Features 60V 4.3m 72A Advance high cell density Trench technology Low R to minimize conductive loss DS(ON)... See More ⇒
Detailed specifications: AGM55N15A, AGM55N15D, AGM55P10A, AGM55P10D, AGM55P10S, AGM6014A, AGM6014AP, AGM6018A, IRFP450, AP0903G, AP0903GD, AP1002, AP120N03, AP120N04K, AP12N10S, AP1310, AP1310K
Keywords - AGM601LL MOSFET specs
AGM601LL cross reference
AGM601LL equivalent finder
AGM601LL pdf lookup
AGM601LL substitution
AGM601LL replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: AP10H03DF
🌐 : EN ES РУ
LIST
Last Update
MOSFET: BCD70N07A | BCD90N03 | BCD80N06 | T50N06 | H50N06 | BCD12N65 | BCT12N65 | BCD4N65 | BCT4N65 | BCD7N65
Popular searches
2sc458 datasheet | irfz48 | bf494 transistor equivalent | 2sc458 pinout | bc183l | tip35 datasheet | tip36c datasheet | 2sc461
