AP0903GD Datasheet. Specs and Replacement

Type Designator: AP0903GD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0115 Ohm

Package: DFN5X6

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AP0903GD datasheet

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AP0903GD

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AP0903GD

AP0903GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 8.5m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of ... See More ⇒

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AP0903GD

AP0903GYT-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement D BVDSS 30V Good Thermal Dissipation RDS(ON) 9m Low On-resistance ID 16A G RoHS Compliant & Halogen-Free S D D D Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ... See More ⇒

 7.3. Size:168K  ape
 ap0903gm.pdf pdf_icon

AP0903GD

AP0903GM-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low On-resistance BVDSS 30V D D D Simple Drive Requirement RDS(ON) 8.5m D Fast Switching Characteristic ID 13.3A G S RoHS Compliant & Halogen-Free S S SO-8 Description D AP0903 series are from... See More ⇒

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Detailed specifications: AGM55P10A, AGM55P10D, AGM55P10S, AGM6014A, AGM6014AP, AGM6018A, AGM601LL, AP0903G, AO4407, AP1002, AP120N03, AP120N04K, AP12N10S, AP1310, AP1310K, AP150N03G, AP150N03Q

Keywords - AP0903GD MOSFET specs

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