AP200N04D Datasheet. Specs and Replacement

Type Designator: AP200N04D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 180 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 33.4 nS

Cossⓘ - Output Capacitance: 523 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO263

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AP200N04D datasheet

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AP200N04D

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AP200N04D

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AP200N04D

AP200N04TLG5 40V N-Channel Enhancement Mode MOSFET Description The AP200N04TLG5 uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =200A DS D R ... See More ⇒

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AP200N04D

AP200N04NF 40V N-Channel Enhancement Mode MOSFET Description The AP200N04NF uses advanced APM-SGT V technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =200A DS D R ... See More ⇒

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Detailed specifications: AP150N03Q, AP15N10K, AP1605, AP1606, AP180N03G, AP18P30Q, AP2003, AP200N04, IRFZ24N, AP2012, AP2012S, AP2022S, AP2035G, AP2035Q, AP2045KD, AP2055K, AP2080KA

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