AP2012 Datasheet. Specs and Replacement
Type Designator: AP2012 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 230 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TSSOP8
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AP2012 substitution
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AP2012 datasheet
Detailed specifications: AP15N10K, AP1605, AP1606, AP180N03G, AP18P30Q, AP2003, AP200N04, AP200N04D, 2N60, AP2012S, AP2022S, AP2035G, AP2035Q, AP2045KD, AP2055K, AP2080KA, AP2080Q
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