AP20N100Q Datasheet. Specs and Replacement

Type Designator: AP20N100Q  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 32.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 181 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.038 Ohm

Package: PDFN3X3-8L

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AP20N100Q datasheet

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AP20N100Q

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AP20N100Q

AP20N10D 100V N-Channel Enhancement Mode MOSFET Description The AP20N10D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =20A DS D R Type 65m @ V =10V DS(ON) GS Applic... See More ⇒

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AP20N100Q

AP20N15AGH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20.5A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the G D best combination of fast switching,... See More ⇒

 8.2. Size:94K  ape
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AP20N100Q

AP20N15GH-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET D Simple Drive Requirement BVDSS 150V Lower Gate Charge RDS(ON) 100m Fast Switching Characteristic ID 20A G RoHS Compliant & Halogen-Free S Description G Advanced Power MOSFETs from APEC provide the D S TO-252(H) designer with the best combination of fast ... See More ⇒

Detailed specifications: AP2022S, AP2035G, AP2035Q, AP2045KD, AP2055K, AP2080KA, AP2080Q, AP20N06T, IRFZ46N, AP20P30S, AP2301B, AP2310, AP2316, AP2317A, AP2317QD, AP2317SD, AP2318A

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