AP2317QD Datasheet. Specs and Replacement

Type Designator: AP2317QD  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 15 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 12 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 35 nS

Cossⓘ - Output Capacitance: 320 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: PDFN3.3X3.3-8L

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AP2317QD datasheet

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AP2317QD

AP2317GN-HF Halogen-Free Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Simple Drive Requirement BVDSS -20V Small Package Outline RDS(ON) 52m D Surface Mount Device ID - 4.2A RoHS Compliant S SOT-23 G Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G low on-resist... See More ⇒

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Detailed specifications: AP2080Q, AP20N06T, AP20N100Q, AP20P30S, AP2301B, AP2310, AP2316, AP2317A, K2611, AP2317SD, AP2318A, AP2335, AP25N06K, AP25N06Q, AP25P06K, AP25P06Q, AP25P30Q

Keywords - AP2317QD MOSFET specs

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