AP25N06K Datasheet and Replacement
Type Designator: AP25N06K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 50 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 168 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO252
AP25N06K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP25N06K Datasheet (PDF)
ap25n04s.pdf
AP25N04S 40V N-Channel Enhancement Mode MOSFET Description The AP25N04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =40V I =25A DS DR
ap25n04d.pdf
AP25N04D 40V N-Channel Enhancement Mode MOSFET Description The AP25N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =25A DS DR
Datasheet: AP2301B , AP2310 , AP2316 , AP2317A , AP2317QD , AP2317SD , AP2318A , AP2335 , AOD4184A , AP25N06Q , AP25P06K , AP25P06Q , AP25P30Q , AP2714QD , AP2714SD , , .
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AP2714SD | AP25P30Q
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MOSFET: AP2714SD | AP2714QD | AP25P30Q | AP25P06Q | AP25P06K | AP25N06Q | AP25N06K | AP2335 | AP2318A | AP2317SD | AP2317QD | AP2317A | AP2316 | AP2310 | AP2301B | AP20P30S
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