All MOSFET. AP25N06K Datasheet

 

AP25N06K Datasheet and Replacement


   Type Designator: AP25N06K
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 3.2 nS
   Cossⓘ - Output Capacitance: 168 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO252

 AP25N06K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

AP25N06K Datasheet (PDF)

 ..1. Size:1968K  allpower
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AP25N06K

 7.1. Size:725K  allpower
ap25n06q.pdf pdf_icon

AP25N06K

 8.1. Size:1696K  cn apm
ap25n04s.pdf pdf_icon

AP25N06K

AP25N04S 40V N-Channel Enhancement Mode MOSFET Description The AP25N04S uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V =40V I =25A DS DR

 8.2. Size:1494K  cn apm
ap25n04d.pdf pdf_icon

AP25N06K

AP25N04D 40V N-Channel Enhancement Mode MOSFET Description The AP25N04D uses advanced trench technology to provide excellent R , low gate charge and DS(ON)operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 40V I =25A DS DR

Datasheet: AP2301B , AP2310 , AP2316 , AP2317A , AP2317QD , AP2317SD , AP2318A , AP2335 , AOD4184A , AP25N06Q , AP25P06K , AP25P06Q , AP25P30Q , AP2714QD , AP2714SD , , .

History: AP2714SD | AP25P30Q

Keywords - AP25N06K MOSFET datasheet

 AP25N06K cross reference
 AP25N06K equivalent finder
 AP25N06K lookup
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