AP25P06K Datasheet. Specs and Replacement

Type Designator: AP25P06K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 60 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 25 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 14 nS

Cossⓘ - Output Capacitance: 90.6 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm

Package: TO252

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AP25P06K datasheet

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AP25P06K

AP25P15GI RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -140V Simple Drive Requirement RDS(ON) 95m Fast Switching Characteristic ID -23A G S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance... See More ⇒

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AP25P06K

AP25P15GS-HF RoHS-compliant Product Advanced Power P-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Lower Gate Charge D BVDSS -140V Simple Drive Requirement RDS(ON) 95m Fast Switching Characteristic ID -23A G RoHS Compliant & Halogen-Free S Description Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, rugge... See More ⇒

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Detailed specifications: AP2316, AP2317A, AP2317QD, AP2317SD, AP2318A, AP2335, AP25N06K, AP25N06Q, 60N06, AP25P06Q, AP25P30Q, AP2714QD, AP2714SD, AP2716KD, AP2716QD, AP2716SD, AP2N65K

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