AP2714QD Datasheet and Replacement

   Type Designator: AP2714QD
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16(18) A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13(16) nS
   Cossⓘ - Output Capacitance: 84(134) pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022(0.035) Ohm
   Package: PDFN3X3

 AP2714QD Transistor Equivalent Substitute - MOSFET Cross-Reference Search