AP30H150K Datasheet. Specs and Replacement

Type Designator: AP30H150K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 62.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 100 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 460 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO252

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Detailed specifications: AP2716QD, AP2716SD, AP2N65K, AP3002S, AP3003, AP3004S, AP3065SD, AP30H150G, IRF640, AP30H150Q, AP30H180K, AP30H220G, AP30H60K, AP30H80K, AP30N03K, AP30N04K, AP30P06

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