AP30P06 Spec and Replacement
Type Designator: AP30P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 30 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 251 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO220
AP30P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
AP30P06 Specs
ap30p06d.pdf
AP30P06D -60V P-Channel Enhancement Mode MOSFET Description The AP30P06D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-30A DS D R ... See More ⇒
ap30p03df.pdf
AP30P03DF 30V P-Channel Enhancement Mode MOSFET Description The AP30P03DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-30A DS D R ... See More ⇒
Detailed specifications: AP30H150K , AP30H150Q , AP30H180K , AP30H220G , AP30H60K , AP30H80K , AP30N03K , AP30N04K , IRF3710 , AP30P06K , AP3100A , , , , , , .
History: AP30P06K
Keywords - AP30P06 MOSFET specs
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