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AP3139 Specs and Replacement


   Type Designator: AP3139
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 0.15 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 0.66 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 5.8 nS
   Cossⓘ - Output Capacitance: 15 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.52 Ohm
   Package: SOT23
 

 AP3139 substitution

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AP3139 Specs

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AP3139

AP3139 P-Channel Enhancement Mosfet KD AP3139 SOT-23 C C All Power Microelectronics Co.,Ltd 1 V1.0 AP3139 P-Channel Enhancement Mosfet All Power Microelectronics Co.,Ltd 2 V1.0 AP3139 P-Channel Enhancement Mosfet All Power Microelectronics Co.,Ltd 3 V1.0 AP3139 P-Channel Enhancement Mosfet Dimensions Ref. Millimeters Inches G Typ. Typ. Min. Max. Min. Max. A 2.30 2.40 2.5... See More ⇒

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AP3139

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Detailed specifications: AP30H80K , AP30N03K , AP30N04K , AP30P06 , AP30P06K , AP3100A , AP3101A , AP3134N5 , P55NF06 , AP3205 , AP3404 , AP3404S , AP3415E , AP3912GD , AP3N50F , AP3N50K , .

History: AP3205

Keywords - AP3139 MOSFET specs

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