AP3404S Specs and Replacement
Type Designator: AP3404S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.4 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: SOT23
AP3404S substitution
AP3404S Specs
ap3404mi.pdf
AP3404MI 30V N-Channel Enhancement Mode MOSFET Description The AP3404MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =6A DS D R ... See More ⇒
ap3404bi.pdf
AP3404BI 30V N-Channel Enhancement Mode MOSFET Description The AP3404BI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 30V I =4.2A DS D R ... See More ⇒
Detailed specifications: AP30P06 , AP30P06K , AP3100A , AP3101A , AP3134N5 , AP3139 , AP3205 , AP3404 , IRFP250N , AP3415E , AP3912GD , AP3N50F , AP3N50K , , , , .
History: AP3415E
Keywords - AP3404S MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
History: AP3415E
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MOSFET: AP3N50K | AP3N50F | AP3912GD
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