AP40N06K Datasheet. Specs and Replacement
Type Designator: AP40N06K 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 65 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 40 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.1 nS
Cossⓘ - Output Capacitance: 91 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
Package: TO252
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AP40N06K substitution
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AP40N06K datasheet
ap40n03gp-hf.pdf
AP40N03GP-HF Halogen-Free Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A RoHS Compliant & Halogen-Free G TO-220 D S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ... See More ⇒
ap40n03gp.pdf
AP40N03GP RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOSFET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A G D TO-220 S Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, G ruggedized device design, low on-r... See More ⇒
ap40n03gs.pdf
AP40N03GS RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp. POWER MOS FET Low Gate Charge BVDSS 30V Simple Drive Requirement RDS(ON) 17m Fast Switching Characteristic ID 40A G D S TO-263 Description D Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-res... See More ⇒
Detailed specifications: AP4409S, AP4410, AP4435C, AP4580, AP4606, AP4688S, AP4008SD, AP4013S, SKD502T, AP40N100K, AP40N100LK, AP40P04G, AP40P04K, AP40P04Q, AP40P05, AP4812, AP4812S
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