All MOSFET. ZXMN6A25DN8 Datasheet

 

ZXMN6A25DN8 MOSFET. Datasheet pdf. Equivalent


   Type Designator: ZXMN6A25DN8
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 5 A
   Qgⓘ - Total Gate Charge: 11 nC
   Cossⓘ - Output Capacitance: 1063 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.07 Ohm
   Package: SO8

 ZXMN6A25DN8 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

ZXMN6A25DN8 Datasheet (PDF)

 ..1. Size:721K  diodes
 zxmn6a25dn8.pdf

ZXMN6A25DN8 ZXMN6A25DN8

ZXMN6A25DN8Dual 60V SO8 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.050 @ VGS = 10V 5600.070 @ VGS = 4.5V 4.2DescriptionD1 D2This new generation trench MOSFET from Zetexfeatures a unique structure combining the benefits oflow on-resistance and fast switching, making it idealfor high efficiency power management applications. G1 G2FeaturesS1 S2

 6.1. Size:659K  diodes
 zxmn6a25g.pdf

ZXMN6A25DN8 ZXMN6A25DN8

ZXMN6A25G60V SOT223 N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( )ID (A)0.050 @ VGS = 10V 6.7600.070 @ VGS = 4.5V 5.7DescriptionDThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementGapplications.FeaturesS Low on-r

 6.2. Size:603K  diodes
 zxmn6a25gta.pdf

ZXMN6A25DN8 ZXMN6A25DN8

ZXMN6A25G Green60V SOT223 N-channel enhancement mode MOSFET Product Summary Features and Benefits ID Low Input Capacitance BVDSS RDS(on) max TA = +25C Low On-Resistance Fast Switching Speed 50m @ VGS = 10V 6.7A 60V Lead-Free Finish; RoHS Compliant (Notes 1 & 2) 70m @ VGS = 4.5V 5.7A Halogen and Antimony Free. Green Device (Note 3)

 6.3. Size:807K  diodes
 zxmn6a25k.pdf

ZXMN6A25DN8 ZXMN6A25DN8

ZXMN6A25K60V DPAK N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.050 @ VGS= 10V 10.7600.070 @ VGS= 4.5V 9DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistance

 6.4. Size:805K  zetex
 zxmn6a25ktc.pdf

ZXMN6A25DN8 ZXMN6A25DN8

ZXMN6A25K60V DPAK N-channel enhancement mode MOSFETSummaryV(BR)DSS RDS(on) ( ) ID (A)0.050 @ VGS= 10V 10.7600.070 @ VGS= 4.5V 9DescriptionThis new generation trench MOSFET from Zetex features a uniquestructure combining the benefits of low on-resistance and fastswitching, making it ideal for high efficiency power managementapplications.FeaturesD Low on-resistance

Datasheet: ZXMN6A08G , ZXMN6A08K , ZXMN6A09DN8 , ZXMN6A09G , ZXMN6A09K , ZXMN6A11DN8 , ZXMN6A11G , ZXMN6A11Z , SKD502T , ZXMN6A25G , ZXMN6A25K , ZXMN6A25N8 , ZXMN7A11G , ZXMN7A11K , BSS123Z , BSS123W , ZVN4424Z .

History: IRFS840 | 2N6903

 

 
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