AP4813K PDF Specs and Replacement
Type Designator: AP4813K
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 18 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ - Output Capacitance: 55 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
Package: TO252-4L
AP4813K substitution
AP4813K PDF Specs
ap4813gyt-hf.pdf
AP4813GYT-HF Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE D Simple Drive Requirement BVDSS 30V Good Recovery Time RDS(ON) 10m Schottky Diode Small Size & Lower Profile ID 15A G RoHS Compliant & Halogen-Free S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fas... See More ⇒
ap4813gsm-hf.pdf
AP4813GSM-HF Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE Simple Drive Requirement BVDSS 30V D D D Good Recovery Time RDS(ON) 9m D Fast Switching Performance ID 13A G S RoHS Compliant & Halogen-Free S SO-8 S D Description Advanced Power MOSFETs from APEC provide the Schottky Diode G designer with the best comb... See More ⇒
ap4816gsm.pdf
AP4816GSM RoHS-compliant Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE S1/D2 Simple Drive Requirement CH-1 BVDSS 30V S1/D2 S1/D2 DC-DC Converter Suitable RDS(ON) 22m D1 Fast Switching Performance ID 6.7A G2 CH-2 BVDSS 30V S2/A S2/A SO-8 RDS(ON) 13m G1 Description ID 11.5A The Advanced Power MOSFETs from APEC provide the des... See More ⇒
Detailed specifications: AP40N100K , AP40N100LK , AP40P04G , AP40P04K , AP40P04Q , AP40P05 , AP4812 , AP4812S , IRF530 , AP4846 , AP4847 , AP4946S , AP5040QD , AP50N04GD , AP50N04K , AP50N04Q , .
Keywords - AP4813K MOSFET specs
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