AP4813K Datasheet. Specs and Replacement

Type Designator: AP4813K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.2 nS

Cossⓘ - Output Capacitance: 55 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm

Package: TO252-4L

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AP4813K datasheet

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AP4813K

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AP4813K

AP4813GYT-HF Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE D Simple Drive Requirement BVDSS 30V Good Recovery Time RDS(ON) 10m Schottky Diode Small Size & Lower Profile ID 15A G RoHS Compliant & Halogen-Free S D D Description D Advanced Power MOSFETs from APEC provide the designer with the D best combination of fas... See More ⇒

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 ap4813gsm-hf.pdf pdf_icon

AP4813K

AP4813GSM-HF Halogen-Free Product Advanced Power N-CHANNEL MOSFET WITH SCHOTTKY Electronics Corp. DIODE Simple Drive Requirement BVDSS 30V D D D Good Recovery Time RDS(ON) 9m D Fast Switching Performance ID 13A G S RoHS Compliant & Halogen-Free S SO-8 S D Description Advanced Power MOSFETs from APEC provide the Schottky Diode G designer with the best comb... See More ⇒

 9.1. Size:131K  ape
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AP4813K

AP4816GSM RoHS-compliant Product Advanced Power DUAL N-CHANNEL MOSFET WITH Electronics Corp. SCHOTTKY DIODE S1/D2 Simple Drive Requirement CH-1 BVDSS 30V S1/D2 S1/D2 DC-DC Converter Suitable RDS(ON) 22m D1 Fast Switching Performance ID 6.7A G2 CH-2 BVDSS 30V S2/A S2/A SO-8 RDS(ON) 13m G1 Description ID 11.5A The Advanced Power MOSFETs from APEC provide the des... See More ⇒

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Detailed specifications: AP40N100K, AP40N100LK, AP40P04G, AP40P04K, AP40P04Q, AP40P05, AP4812, AP4812S, IRF530, AP4846, AP4847, AP4946S, AP5040QD, AP50N04GD, AP50N04K, AP50N04Q, AP50N04QD

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