AP50P06K MOSFET PDF: P-Ch, 60V, 50A. Full specification with pinout and replacement list

AP50P06K PDF Specs and Replacement

   Type Designator: AP50P06K
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 175 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.022 Ohm
   Package: TO252

AP50P06K substitution

- MOSFET ⓘ Cross-Reference Search

AP50P06K PDF Specs

..1. Size:800K allpower
ap50p06k.pdf pdf_icon

... See More ⇒

7.1. Size:1575K cn apm
ap50p06p ap50p06t.pdf pdf_icon

AP50P06PIT -60V P-Channel Enhancement Mode MOSFET Description The AP50P06P uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -60V I =-50A DS D R ... See More ⇒

8.1. Size:2802K cn apm
ap50p02df.pdf pdf_icon

AP50P02DF -20V P-Channel Enhancement Mode MOSFET Description The AP50P02DF uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -20V I =-50A DS D 6.8m ) R ... See More ⇒

8.2. Size:1281K cn apm
ap50p03d.pdf pdf_icon

AP50P03D -30V P-Channel Enhancement Mode MOSFET Description The AP50P03D uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = -30V I =-50A DS D R ... See More ⇒