AP5N10S Datasheet. Specs and Replacement
Type Designator: AP5N10S 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.4 nS
Cossⓘ - Output Capacitance: 30 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.145 Ohm
Package: SOT23
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AP5N10S substitution
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AP5N10S datasheet
ap5n10si.pdf
AP5N10SI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10SI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS D R ... See More ⇒
ap5n10mi.pdf
AP5N10MI 100V N-Channel Enhancement Mode MOSFET Description The AP5N10MI uses advanced trench technology to provide excellent R , low gate charge and DS(ON) operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features V = 100V I =5A DS D R ... See More ⇒
Detailed specifications: AP50N04K, AP50N04Q, AP50N04QD, AP50N06K, AP50P06K, AP50P20K, AP50P20Q, AP5N10M, 5N60, AP5N20K, AP5N50K, AP6007S, AP6009S, AP60N04Q, AP60P20K, AP6242, AP6800
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